Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along the hard axis
نویسندگان
چکیده
Related Articles Study of influence of domain structure on observed magnetoresistance anomalies in GaMnAs J. Appl. Phys. 113, 093708 (2013) Static and dynamic properties of Fibonacci multilayers J. Appl. Phys. 113, 17C102 (2013) Critical switching current and thermal stability of magnetic tunnel junctions with uncompensated CoFeB/Ru/CoFeB synthetic free layers J. Appl. Phys. 113, 093906 (2013) Sublattice magnetizations of ultrathin alloy [Co1−cGdc]n nanojunctions between Co leads using the combined effective field theory and mean field theory methods J. Appl. Phys. 113, 094303 (2013) Magnetic orders and electronic structure in LaMnO3/SrTiO3 superlattices J. Appl. Phys. 113, 17D902 (2013)
منابع مشابه
Thermal spin transfer in Fe-MgO-Fe tunnel junctions.
We compute thermal spin transfer (TST) torques in Fe-MgO-Fe tunnel junctions using a first principles wave-function-matching method. At room temperature, the TST in a junction with 3 MgO monolayers amounts to 10(-7) J/m(2)/K, which is estimated to cause magnetization reversal for temperature differences over the barrier of the order of 10 K. The large TST can be explained by multiple scattering...
متن کاملSpin torque, tunnel-current spin polarization, and magnetoresistance in MgO magnetic tunnel junctions.
We employ the spin-torque response of magnetic tunnel junctions with ultrathin MgO tunnel barrier layers to investigate the relationship between spin transfer and tunnel magnetoresistance (TMR) under finite bias, and find that the spin torque per unit current exerted on the free layer decreases by < 10% over a bias range where the TMR decreases by > 40%. This is inconsistent with free-electron-...
متن کاملVoltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions
Recent progress in magnetic tunnel junctions (MTJs) with a perpendicular easy axis consisting of CoFeB and MgO stacking structures has shown that magnetization dynamics are induced due to voltage-controlled magnetic anisotropy (VCMA), which will potentially lead to future low-power-consumption information technology. For manipulating magnetizations in MTJs by applying voltage, it is necessary t...
متن کاملPicosecond electric field pulse induced coherent magnetic switching in MgO/FePt/Pt(001)-based tunnel junctions: a multiscale study
Combined methods of first-principles calculations and Landau-Lifshitz-Gilbert (LLG) macrospin simulations are performed to investigate the coherent magnetization switching in the MgO/FePt/Pt(001)-based magnetic tunnel junctions triggered by short pulses of electric field through the control of magnetic anisotropy energy (MAE) electrically. First-principles calculations indicate that the MAE of ...
متن کاملHigh TMR and Low RA in Mg-B-O and Ni-Fe-B Nanopillar Fabrication for Spin-Torque Switching
Spin-torque transfer-induced magnetization switching has many applications, such as spin-torque magnetic random access memory (ST-MRAM) and has potential applications for tunable microwave oscillators at the gigahertz (GHz) range. Magnesium oxide (MgO)-based magnetic tunnel junctions for ST-MRAM especially attract great attention due to their high tunneling magnetoresistance (TMR) at room tempe...
متن کامل